DocumentCode
1208551
Title
Nanostructured Silicon Thin Films Deposited Under Dusty Plasma Conditions
Author
Cavarroc, Marjorie ; Mikikian, Maxime ; Tessier, Yves ; Boufendi, Laïfa
Author_Institution
Groupe de Recherches sur l´´Energetique des Milieux Ionises (GREMI), Univ. d´´Orleans, Orleans
Volume
36
Issue
4
fYear
2008
Firstpage
1016
Lastpage
1017
Abstract
Silane-based dusty plasmas are widely used in plasma-enhanced chemical vapor deposition processes to synthesize silicon nanoparticles and/or nanostructured thin films. Under certain conditions, it is possible to access to the inner structure of the thin film by scanning electron microscopy, using the ldquoholerdquo due to dust particles that moved when the sample is brought back to atmospheric pressure.
Keywords
dusty plasmas; elemental semiconductors; nanoparticles; plasma CVD; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; Si; atmospheric pressure; nanoparticles; nanostructured silicon thin films; plasma-enhanced chemical vapor deposition; scanning electron microscopy; silane-based dusty plasmas; Dust particle; PECVD; dusty plasma; nanostructured thin film; radio frequency (RF) discharge; silicon;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2008.920889
Filename
4509474
Link To Document