• DocumentCode
    1208596
  • Title

    Yellow emission (573.5 nm) Ga0.65In0.35P lasers grown on GaAs0.6P0.4 substrates by gas source molecular beam epitaxy

  • Author

    Chen, Albert C. ; Cheng, K.Y.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
  • Volume
    30
  • Issue
    24
  • fYear
    1994
  • fDate
    11/24/1994 12:00:00 AM
  • Firstpage
    2049
  • Lastpage
    2050
  • Abstract
    The first current injection lasing action in AlGaInP/Ga0.65 In0.35P heterostructures grown on commercially available GaAs0.6P0.4 substrates is reported. At 77 K, laser diodes exhibited threshold current densities of 900 A/cm2 with yellow stimulated emission near 5735 Å. This is the shortest current injection lasing wavelength ever achieved in a III-V compound semiconductor
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; stimulated emission; 5735 nm; 77 K; AlGaInP; AlGaInP/Ga0.65In0.35P heterostructures; Ga0.65In0.35P; Ga0.65In0.35P lasers; GaAs0.6P0.4; GaAs0.6P0.4 substrates; III-V compound semiconductor; current injection lasing action; gas source molecular beam epitaxy; laser diodes; shortest current injection lasing wavelength; threshold current densities; yellow emission; yellow stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941399
  • Filename
    337968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1208596