Title :
Yellow emission (573.5 nm) Ga0.65In0.35P lasers grown on GaAs0.6P0.4 substrates by gas source molecular beam epitaxy
Author :
Chen, Albert C. ; Cheng, K.Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
fDate :
11/24/1994 12:00:00 AM
Abstract :
The first current injection lasing action in AlGaInP/Ga0.65 In0.35P heterostructures grown on commercially available GaAs0.6P0.4 substrates is reported. At 77 K, laser diodes exhibited threshold current densities of 900 A/cm2 with yellow stimulated emission near 5735 Å. This is the shortest current injection lasing wavelength ever achieved in a III-V compound semiconductor
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; stimulated emission; 5735 nm; 77 K; AlGaInP; AlGaInP/Ga0.65In0.35P heterostructures; Ga0.65In0.35P; Ga0.65In0.35P lasers; GaAs0.6P0.4; GaAs0.6P0.4 substrates; III-V compound semiconductor; current injection lasing action; gas source molecular beam epitaxy; laser diodes; shortest current injection lasing wavelength; threshold current densities; yellow emission; yellow stimulated emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941399
