Title :
Strained InGaAs quantum well lasers with small-divergence angles for high-power pump modules
Author :
Temmyo, J. ; Shimizu, Maiko
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
11/24/1994 12:00:00 AM
Abstract :
Epitaxial structures were designed for high-power strained InGaAs/AlGaAs quantum well lasers with low vertical-divergence emitting angles. The vertical divergence angles achieved were down to ~20°. High power output 1.02 μm pump modules with well-designed strained quantum well lasers have been developed for a 1.3 μm band Pr+ -doped fibre amplifier. A maximum optical fibre output of 157 mW was obtained
Keywords :
III-V semiconductors; aluminium compounds; fibre lasers; gallium arsenide; indium compounds; optical pumping; quantum well lasers; surface emitting lasers; 1.02 micron; 1.3 micron; 157 mW; InGaAs-AlGaAs; InGaAs/AlGaAs; epitaxial structures; fibre amplifier; high-power pump modules; optical fibre output; quantum well lasers; small-divergence angles; strained quantum well lasers; vertical-divergence emitting angles;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941403
