Title :
Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
Author :
Choquette, Kent D. ; Schneider, R.P. ; Lear, K.L. ; Geib, Kent M.
Author_Institution :
Dept. of Photonics Res., Sandia Nat. Labs., Albuquerque, NM
fDate :
11/24/1994 12:00:00 AM
Abstract :
Novel vertical-cavity surface emitting lasers fabricated using selective oxidation to form a current aperture under a top monolithic distributed Bragg reflector mirror are reported. Large cross-sectional area lasers (259 μm2) exhibit threshold current densities of 150 A/cm2 per quantum well and record low threshold voltage of 1.33 V. Smaller lasers (36 μm2) possess threshold currents of 900 μA with maximum output powers greater than 1 mW. The record performance of these oxidised vertical-cavity lasers arises from the low mirror series resistance and very efficient current injection into the active region
Keywords :
distributed Bragg reflector lasers; oxidation; quantum well lasers; semiconductor technology; surface emitting lasers; 1 mW; 1.33 V; 900 muA; cross-sectional area; current aperture; current injection; maximum output powers; mirror series resistance; monolithic distributed Bragg reflector mirror; quantum well; selective oxidation; surface emitting lasers; threshold current densities; threshold voltage; vertical-cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941421
