DocumentCode :
1208649
Title :
High power antiguided laser array fabricated using a superlattice structure
Author :
Gray, J.M. ; Marsh, John H. ; Roberts, Jeffrey S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
Volume :
30
Issue :
24
fYear :
1994
fDate :
11/24/1994 12:00:00 AM
Firstpage :
2040
Lastpage :
2041
Abstract :
The operation of antiguided array lasers is dependent on the creation of an effective refractive index step between the antiguide core and the interelement regions. The authors describe a novel technique, using zinc diffusion to disorder a superlattice, for creating the necessary index step in a 10 element antiguided laser array operating at 0.860 μm. Output powers approach 400 mW per facet into a 3° (FWHM) beam. Use of this fabrication technique removes the need for overgrowth
Keywords :
III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; optical fabrication; refractive index; semiconductor laser arrays; semiconductor superlattices; waveguide lasers; 0.86 mum; 400 mW; FWHM beam; GaAs-AlGaAs; antiguide core; antiguided array lasers; effective refractive index step; fabrication technique; high power antiguided laser array; index step; interelement regions; output powers; semiconductor superlattice disordering; superlattice structure; zinc diffusion;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19941408
Filename :
337974
Link To Document :
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