Title :
Extremely low threshold (0.56 mA) operation in 1.3 μm InGaAsP/InP compressive-strained-MQW lasers
Author :
Uomi, K. ; Tsuchiya, Takao ; Komori, M. ; Oka, Akira ; Shinoda, Kazuma ; Oishi, A.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo
fDate :
11/24/1994 12:00:00 AM
Abstract :
A record low threshold current of 0.56 mA, as a long-wavelength laser, has been obtained in a 1.3 μm InGaAsP/InP strained-MQW laser, at room temperature (25°C), by optimising an active layer and by employing a short cavity with high-reflection coatings
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical films; quantum well lasers; 0.56 mA; 1.3 μm InGaAsP/InP compressive-strained-MQW lasers; 1.3 mum; 25 C; InGaAsP-InP; active layer; extremely low threshold; high-reflection coatings; long-wavelength laser; low threshold current; optimising; room temperature; short cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941373
