Low noise cooled microwave amplifiers-simulation and design

Author

Angelov, Iltcho M. ; Stoev, I.K. ; Ivanov, Zdravko G. ; Todorov, Bogdan N. ; Spasov, A.Y. ; Kollberg, Erik L. ; Lindström, C.O. ; Wendemo, B.L.

Author_Institution

Inst. of Electron., Bulgarian Acad. of Sci., Sofia, Bulgaria

Volume

40

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

389

Lastpage

399

Abstract

The results of a study of cooled low noise field effect transistors and transistor amplifiers are presented. The investigations were made over a broad range of temperature and frequency. The temperature dependence of equivalent circuit elements in the transistor model is reported. This makes it possible to extrapolate with sufficient accuracy the S-parameters up to frequencies where direct measurements are difficult. Suspended microstrip lines have been used in the amplifier designs in order to minimize the losses and to improve the mechanical stability. The results of the theoretical studies are illustrated with a presentation of cooled amplifiers for the ranges 0.5-4 GHz, 3.7-4.1 GHz, 4.8-5.2 GHz, 19-23 GHz and 26-28 GHz, which are designed on the basis of the theoretically obtained parameters

Keywords

cooling; field effect transistors; microwave amplifiers; solid-state microwave circuits; solid-state microwave devices; 0.5 to 28 GHz; FET amplifiers; S-parameters; SHF; UHF; cooled amplifiers; cooled low noise field effect transistors; cooled microwave amplifiers; equivalent circuit elements; extrapolation; low noise amplifiers; mechanical stability; microwave amplifiers; suspended microstrip lines; temperature dependence; transistor model; Circuit noise; Equivalent circuits; Frequency; Low-noise amplifiers; Microwave FETs; Microwave amplifiers; Microwave transistors; Scattering parameters; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.120113

Filename

120113