Title :
Electrical and reliability properties of PZT thin films for ULSI DRAM applications
Author :
Carrano, John ; Sudhama, Chandra ; Chikarmane, Vinay ; Lee, Jack ; Tasch, Al ; Shepherd, William ; Abt, Norman
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode materials, film thicknesses (200 nm to 600 nm) and capacitor areas were used. A large stored-energy density (Q/sub c/) of 15 mu C/cm/sup 2/ (at 125 kV/cm) was measured using different methods. The results indicate that PZT thin films exhibit material properties which might satisfy the requirements of ULSI DRAMs.<>
Keywords :
DRAM chips; VLSI; ferroelectric storage; ferroelectric thin films; lead compounds; reliability; 200 to 600 nm; PZT thin films; PbZrO3TiO3; ULSI DRAM applications; capacitor areas; electrical properties; electrode materials; ferroelectric capacitors; film thicknesses; reliability; sol gel deposition; stored-energy density; Capacitors; DRAM chips; Density measurement; Electrodes; Ferroelectric films; Ferroelectric materials; Q measurement; Random access memory; Transistors; Ultra large scale integration;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
