DocumentCode
1208899
Title
Thermal analysis of solid-state devices using the boundary element method
Author
Lee, Chin C. ; Palisoc, Arthur L. ; Baynham, John M W
Author_Institution
Dept. of Electr. Eng., California Univ., Irvine, CA, USA
Volume
35
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
1151
Lastpage
1153
Abstract
Thermal analysis of two-dimensional and three-dimensional two-layer device structures have been carried out using the boundary element method (BEM). The resulting thermal profiles for two different device structures agree very well with those obtained using analytical solutions. This agreement indicates not only the accuracy of the BEM but also the correct derivation of the analytical solutions
Keywords
boundary-elements methods; semiconductor device models; semiconductor devices; thermal analysis; 2D structures; 3D structures; BEM; boundary element method; solid-state devices; thermal analysis; thermal profiles; two-layer device structures; Boundary element methods; CMOS technology; Electron devices; Geometrical optics; Implants; MOSFET circuits; Solid state circuits; Stress; Surface resistance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.3380
Filename
3380
Link To Document