Title :
Thermal analysis of solid-state devices using the boundary element method
Author :
Lee, Chin C. ; Palisoc, Arthur L. ; Baynham, John M W
Author_Institution :
Dept. of Electr. Eng., California Univ., Irvine, CA, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
Thermal analysis of two-dimensional and three-dimensional two-layer device structures have been carried out using the boundary element method (BEM). The resulting thermal profiles for two different device structures agree very well with those obtained using analytical solutions. This agreement indicates not only the accuracy of the BEM but also the correct derivation of the analytical solutions
Keywords :
boundary-elements methods; semiconductor device models; semiconductor devices; thermal analysis; 2D structures; 3D structures; BEM; boundary element method; solid-state devices; thermal analysis; thermal profiles; two-layer device structures; Boundary element methods; CMOS technology; Electron devices; Geometrical optics; Implants; MOSFET circuits; Solid state circuits; Stress; Surface resistance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
