DocumentCode :
1208904
Title :
Nuclear microprobe imaging of single-event upsets
Author :
Horn, K.M. ; Doyle, B.L. ; Sexton, Fred W.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Volume :
39
Issue :
1
fYear :
1992
fDate :
2/1/1992 12:00:00 AM
Firstpage :
7
Lastpage :
12
Abstract :
An imaging technique has been developed which produces micron-resolution maps of where single-event upsets occur during ion irradiation of integrated circuits. From these `upset images´ the identity and size of a circuit´s upset-prone components can be directly determined. Utilizing a scanning nuclear microprobe, this imaging technique selectively exposes the lowest functional units of an integrated circuit (e.g. transistor drains, gates) and immediately measures the effect of a high-energy ion strike on circuit performance. Information about an integrated circuit´s radiation hardness (i.e. total dose response and threshold upset LET), which has previously been acquired at the circuit level, can also be measured at the individual transistor level. Such detailed spatial characterization, provides a novel precision diagnostic technique with which to study single-event upset processes in integrated circuits
Keywords :
integrated circuit testing; ion beam effects; ion microprobe analysis; radiation hardening (electronics); circuit performance; high-energy ion strike; integrated circuits; ion irradiation; ion microbeam techniques; micron-resolution maps; nuclear microprobe imaging; radiation hardness; scanning nuclear microprobe; single-event upsets; spatial characterization; threshold upset LET; total dose response; transistor level; upset images; upset-prone components; Circuit optimization; Circuit testing; Extraterrestrial measurements; Focusing; Integrated circuit measurements; Integrated circuit technology; Ion beams; Nuclear measurements; Single event upset; Space missions;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.120129
Filename :
120129
Link To Document :
بازگشت