DocumentCode
1209026
Title
23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double-heterojunction bipolar transistor fabrication process
Author
Sano, Eiichi ; Yoneyama, Mitsuru ; Yamahata, S. ; Matsuoka, Yasutaka
Author_Institution
NTT LSI Labs., Atsugi
Volume
30
Issue
24
fYear
1994
fDate
11/24/1994 12:00:00 AM
Firstpage
2064
Lastpage
2065
Abstract
A 23 GHz bandwidth is achieved with a pin/DHBT photoreceiver in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. This is the widest bandwidth yet reported for monolithic photoreceivers
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 23 GHz; DHBT fabrication process compatible; InP-InGaAs; OEIC; PIN-PD; base-to-collector region; double-heterojunction bipolar transistor; layer structure; monolithic photoreceiver; p-i-n/DHBT photoreceiver; wide bandwidth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941405
Filename
338014
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