• DocumentCode
    1209038
  • Title

    Effect of well/barrier ratio on the performance of strained InGaAs/GaAs quantum well modulators

  • Author

    Ghisoni, M. ; Parry, Guillaume ; Hart, L. ; Roberts, Clive ; Marinopoulou, A. ; Stavrinou, P.N.

  • Author_Institution
    Dept. of Eng. Sci., Oxford Univ.
  • Volume
    30
  • Issue
    24
  • fYear
    1994
  • fDate
    11/24/1994 12:00:00 AM
  • Firstpage
    2067
  • Lastpage
    2069
  • Abstract
    The authors report the electroabsorption response of strained multiquantum well In0.2Ga0.8As/GaAs structures as a function of increasing barrier thickness. We find that a tradeoff exists between improved structural quality and reduced performance due to the increase in nonabsorbing material. However changing the barrier from 100 to 200 Å causes a 25% increase in the maximum absorption change and a significant lowering of the insertion loss
  • Keywords
    III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical losses; semiconductor quantum wells; 100 to 200 A; In0.2Ga0.8As-GaAs; electroabsorption response; insertion loss; strained quantum well modulators; well/barrier ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941379
  • Filename
    338015
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1209038