DocumentCode
1209049
Title
Monolithic integration of optoelectronic smart pixels
Author
Leipold, D. ; Thelen, Klaus ; Schweizer, H.P. ; Seitz, Philipp ; Patterson, Brian D.
Volume
30
Issue
24
fYear
1994
fDate
11/24/1994 12:00:00 AM
Firstpage
2069
Lastpage
2070
Abstract
An AlGaAs/GaAs layer structure, grown in a single step, and a fabrication process has been developed for the monolithic integration of cascadable optoelectronic smart pixels. Metal semiconductor field-effect transistors (MESFETs), light-emitting diodes (LEDs) and photodiodes (PDs) are used for the integration. As an example a threshold circuit consisting of a dual-photodiode input and a current balanced output containing an LED is presented. The circuit shows a switching energy of 2 pJ and a minimum switching power of 3 nW. The maximum light output of the LED is 30 mW with a contrast ratio >1000. The overall power dissipation is 15 mW
Keywords
Schottky gate field effect transistors; gallium arsenide; integrated circuit technology; integrated optoelectronics; light emitting diodes; photodiodes; smart pixels; 15 mW; 2 pJ; 3 nW; 30 mW; AlGaAs-GaAs; LEDs; MESFETs; cascadable smart pixels; current balanced output; dual-photodiode input; fabrication process; light-emitting diodes; monolithic integration; optoelectronic smart pixels; photodiodes; threshold circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941380
Filename
338016
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