Title :
Noise and small-signal performance of three different monolithic InP-based 10 Gbit/s photoreceiver OEICs
Author :
Kaiser, Daniel ; Besca, F. ; Grosskopf, H. ; Gyuro, I. ; Reemtsma, J.-H. ; Kuebart, W.
Author_Institution :
Dep. Opto-Electon. Components ZFZ/WO, Alcatel SEL, Stuttgart
fDate :
11/24/1994 12:00:00 AM
Abstract :
Three circuit concepts (high impedance, common gate, and transimpedance) for a 10 Gbit/s monolithic receiver OEIC consisting of an InGaAs-InP pin photodiode and InAlAs-InGaAs-InP HEMTs are compared in terms of noise and small-signal performance using on-wafer measurements. A total equivalent input noise current of 13.5 pA/√(Hz) within the bandwidth of the transimpedance circuit is the lowest value ever reported for a monolithic InP-based 10 Gbit/s receiver OEIC
Keywords :
III-V semiconductors; digital communication; indium compounds; integrated circuit noise; integrated optoelectronics; optical receivers; p-i-n photodiodes; 10 Gbit/s; HEMTs; InAlAs-InGaAs-InP; InGaAs-InP; PIN photodiode; common gate; high impedance; monolithic InP-based photoreceiver; noise; on-wafer measurements; photoreceiver OEIC; small-signal performance; transimpedance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941397
