• DocumentCode
    1209094
  • Title

    High resistivity InP:Ti,Be by GSMBE

  • Author

    Salaun, S. ; Gauneau, M. ; Le Corre, A. ; Mottet, Serge ; Viallet, J.E.

  • Author_Institution
    CNET, Lannion
  • Volume
    30
  • Issue
    24
  • fYear
    1994
  • fDate
    11/24/1994 12:00:00 AM
  • Firstpage
    2076
  • Lastpage
    2077
  • Abstract
    The authors report the growth, by GSMBE and the semi-insulating behaviour of codoped InP:Ti,Be with high resistivities up to 4×10 7 Ωcm. Current-voltage measurements have been performed and good agreement has been found between experiment and theory using numerical simulation tools
  • Keywords
    III-V semiconductors; beryllium; chemical beam epitaxial growth; electrical conductivity; indium compounds; semiconductor epitaxial layers; semiconductor growth; titanium; GSMBE; InP:Ti,Be; current-voltage measurements; gas source MBE; numerical simulation tools; optoelectronic devices; resistivities; semi-insulating behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941395
  • Filename
    338021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1209094