• DocumentCode
    1209103
  • Title

    Observation of current spikes in thin oxide MOS capacitor

  • Author

    Ling, C.H. ; Ah, L.K. ; Yeow, Y.T.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore
  • Volume
    30
  • Issue
    24
  • fYear
    1994
  • fDate
    11/24/1994 12:00:00 AM
  • Firstpage
    2077
  • Lastpage
    2079
  • Abstract
    0.1 μA cm-2 current spikes have been reported recently in MOS capacitors. The authors attribute this observation to current transients, arising from the staircase sweep of the gate bias, and explain it in terms of the charging and discharging of the silicon space charge layer, and recombination of electrons and holes near the interface
  • Keywords
    MOS capacitors; electric current measurement; electron-hole recombination; insulating thin films; transients; MOS capacitor; current spikes; current transients; electron-hole recombination; space charge layer; staircase sweep; thin oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941404
  • Filename
    338022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1209103