A novel approach for the patterning and high-volume production of sub-40-nm gates

Author

Romero, K. ; Stephan, Rolf ; Grasshoff, Gunter ; Mazur, Martin ; Ruelke, Hartmut ; Huy, Katja ; Klais, Jochen ; McGowan, Sarah ; Dakshina-Murthy, Srikanteswara ; Bell, Scott ; Wright, Marilyn

Author_Institution

Adv. Micro Devices, Dresden, Germany

Volume

18

Issue

4

fYear

2005

Firstpage

539

Lastpage

545

Abstract

A novel approach for the patterning and manufacturing of sub-40-nm gate structures is presented. Rather than using resist or an inorganic hardmask as the patterning layer, this gate patterning scheme uses an amorphous carbon (a:C) and cap hardmask to pattern small gates. Healthy and manufacturable gate lengths have been achieved below 35 nm with this scheme, and the potential exists for further extendibility.

Keywords

amorphous semiconductors; carbon; masks; nanotechnology; semiconductor device manufacture; semiconductor technology; surface treatment; C; amorphous carbon; amorphous semiconductors; cap hardmask; electron device manufacture; gate patterning; high-volume production; nanopatterning; nanotechnology; semiconductor technology; surface treatment; Amorphous materials; Etching; Lithography; Manufacturing; Optical films; Optical refraction; Optical variables control; Production; Resists; Semiconductor films; Amorphous carbon; etching; extendibility; gate patterning; hardmask;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2005.858518

Filename

1528567