DocumentCode
1209784
Title
An analytical model for LDD drain structures
Author
Huang, J. T S
Author_Institution
Honeywell Inc., Plymouth, MN, USA
Volume
35
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
1158
Lastpage
1159
Abstract
An approximate analytical model for short-channel IGFET (isolated-gate field-effect transistor) LDD structures in saturation is developed from a quasi-two-dimensional analysis under the assumption of a nonvanishing field derivative at the pinchoff point. The differences between this model and existing model are compared. It is suggested that the model is useful in determining the location of the pinchoff point, whereby the effect of channel-length modulation can be assessed
Keywords
insulated gate field effect transistors; semiconductor device models; LDD drain structures; analytical model; channel-length modulation; field-effect transistor; isolated-gate; pinchoff point; quasi 2D analysis; quasi-two-dimensional analysis; saturation; short-channel IGFET; Analytical models; Channel bank filters; Differential equations; FETs; Neodymium; Numerical simulation; P-n junctions; Poisson equations; Threshold voltage; Virtual reality;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.3383
Filename
3383
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