Title :
Performance of Silicon Surface Barrier Detectors with Charge Sensitive Amplifiers
Author :
Blankenship, J.L. ; Borkowski, C.J.
Author_Institution :
Instrumentation and Controls Division Oak Ridge National Laboratory Oak Ridge, Tennessee
Abstract :
Silicon surface barrier diode detectors of 1 cm2 and 25 mm2 sensitive area have given pulse height spectral resolutions of 17 kev and 13-¿ kev (FWHM) respectively, for 5.5 mev alpha particles. Reverse currents at 500 volts bias were less than 1 × 10-6 amps/cm2 with breakdown in excess of 1000 volts. A charge sensitive amplifier contributes 3-¿ and 10 kev noise (FWHM) with an input capacitive loading of 20 and 180 pf respectively.
Keywords :
Energy resolution; Envelope detectors; P-n junctions; Pulse amplifiers; Radiation detectors; Semiconductor device noise; Semiconductor diodes; Silicon; Surface fitting; Surface treatment;
Journal_Title :
Nuclear Science, IRE Transactions on
DOI :
10.1109/TNS2.1961.4315793
