Title :
Sequential etch analysis of electron injection in p+-GaAs
Author :
Klausmeier-Brown, M.E. ; Kyono, C.S. ; DeMoulin, P.D. ; Tobin, S.P. ; Lundstrom, M.S. ; Melloch, M.R.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
The influence of heavy impurity doping on electron injection currents in p+-n diodes is investigated experimentally. By extracting the n=1 diffusion current after successive etches of the p+-layer, the electron injection current is characterized. The technique is applied to a metal organic chemical vapor decomposition (MOCVD) grown GaAs solar cell Zn-doped 1.2×10 10 cm-3 on the p-side. The results, which demonstrate that so-called bandgap narrowing effects enhance the injected electron current, have important implications for the design of GaAs solar cells and bipolar transistors
Keywords :
III-V semiconductors; chemical vapour deposition; etching; gallium arsenide; heavily doped semiconductors; semiconductor diodes; semiconductor doping; zinc; GaAs:Zn; III-V semiconductors; MOCVD; bandgap narrowing effects; bipolar transistors; diffusion current; electron injection currents; heavy impurity doping; metal organic chemical vapor decomposition; p+-layer; p+-n diodes; sequential etch analysis; solar cell; successive etches; Diodes; Doping; Electrons; Etching; Gallium arsenide; Impurities; MOCVD; Organic chemicals; Photonic band gap; Photovoltaic cells;
Journal_Title :
Electron Devices, IEEE Transactions on
