Transistor performance and electron transport properties of high performance InAs quantum-well FET´s

Author

Zahurak, J.K. ; Iliadis, A.A. ; Rishton, S.A. ; Masselink, W.T.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

15

Issue

12

fYear

1994

Firstpage

489

Lastpage

492

Abstract

A novel field-effect transistor based on a pseudomorphic InAs quantum well in a doped InGaAs/InAlAs double heterostructure is reported. Low-field mobility, electron peak velocity, and transistor performance are studied as functions of InAs quantum well thickness, where the InAs layer is in the center of a 300-/spl Aring/ uniformly doped InGaAs/InAlAs quantum well lattice matched to InP. Electron transport-both at low and high fields-along with transistor transconductance are optimal for structures with a 30-/spl Aring/ InAs quantum well. Transistors based on the InAs quantum well structures with 0.5-μm gate lengths yielded room temperature extrinsic transconductances of 708 mS/mm, more than a 100% increase over those with no InAs.

Keywords

III-V semiconductors; carrier mobility; high electron mobility transistors; indium compounds; semiconductor quantum wells; 0.5 micron; InAs; InAs quantum-well FETs; InGaAs-InAlAs; InP; MODFET; doped InGaAs/InAlAs double heterostructure; electron peak velocity; electron transport; field-effect transistor; high fields; lattice matched layer; low-field mobility; pseudomorphic InAs quantum well; transconductance; Buffer layers; Carrier confinement; Electron mobility; FETs; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Quantum wells; Senior members;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.338413

Filename

338413