Title :
Optical gain and saturation characteristics of quantum-dot semiconductor optical amplifiers
Author_Institution :
Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan
fDate :
6/1/2003 12:00:00 AM
Abstract :
Detailed theoretical analysis of the gain characteristics of quantum-dot semiconductor optical amplifiers (QD-SOA) is presented. An analytical expression for the optical gain is derived from the quantum dot and wetting layer rate equations. Due to the better confinement of carriers in the quantum dots, our calculation shows that large unsaturated optical gain can be obtained at low operating current. Also, we found that the output saturation intensity of QD-SOA is higher than the output saturation intensity of bulk-SOA. This fact lends itself to the design of efficient low-power SOAs.
Keywords :
laser theory; optical saturation; quantum dot lasers; semiconductor device models; semiconductor optical amplifiers; wetting; carrier confinement; low operating current; low-power SOAs; optical gain; optical saturation characteristics; output saturation intensity; quantum dots; quantum-dot semiconductor optical amplifiers; unsaturated optical gain; wetting layer rate equations; Equations; Laser modes; Laser theory; Optical amplifiers; Optical saturation; Optical signal processing; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.810770