DocumentCode :
1210560
Title :
Optical gain and saturation characteristics of quantum-dot semiconductor optical amplifiers
Author :
Qasaimeh, Omar
Author_Institution :
Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan
Volume :
39
Issue :
6
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
793
Lastpage :
798
Abstract :
Detailed theoretical analysis of the gain characteristics of quantum-dot semiconductor optical amplifiers (QD-SOA) is presented. An analytical expression for the optical gain is derived from the quantum dot and wetting layer rate equations. Due to the better confinement of carriers in the quantum dots, our calculation shows that large unsaturated optical gain can be obtained at low operating current. Also, we found that the output saturation intensity of QD-SOA is higher than the output saturation intensity of bulk-SOA. This fact lends itself to the design of efficient low-power SOAs.
Keywords :
laser theory; optical saturation; quantum dot lasers; semiconductor device models; semiconductor optical amplifiers; wetting; carrier confinement; low operating current; low-power SOAs; optical gain; optical saturation characteristics; output saturation intensity; quantum dots; quantum-dot semiconductor optical amplifiers; unsaturated optical gain; wetting layer rate equations; Equations; Laser modes; Laser theory; Optical amplifiers; Optical saturation; Optical signal processing; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2003.810770
Filename :
1201574
Link To Document :
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