Title :
Comments on "Charge-control MODFET model" [with reply]
Author :
Baek, Jeihoon ; Shur, M. ; Snowden, C.M.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
For the original article see ibid., vol.ED-34, no.8, p.1617-25, 1987. The commenters compare the nonlinear modulation-doped field-effect transistor (MODFET) model proposed by W.A. Hughes and C.M. Snowden with a simple charge-control model developed previously. They demonstrate that these models agree quite well and that the disagreement found by Hughes and Snowden was due to an additional assumption of the complete velocity saturation in the MODFET channel. In reply, Snowden agrees and develops the point further.<>
Keywords :
high electron mobility transistors; semiconductor device models; HEMT; MODFET channel; charge-control model; field-effect transistor; modulation-doped; nonlinear MODFET model; velocity saturation; Analytical models; Circuit simulation; Electron mobility; Epitaxial layers; FETs; HEMTs; Integrated circuit modeling; MODFETs; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
