Title :
1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth
Author :
Zhao, Hang ; Haglund, A. ; Westburgh, P. ; Wang, S.M. ; Gustavsson, J.S. ; Sadeghi, Mohammadreza ; Larsson, A.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Abstract :
The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth. High speed, ridge waveguide lasers fabricated from high quality material grown by molecular beam epitaxy exhibited a damped modulation response with a bandwidth of 13 GHz.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; molecular beam epitaxial growth; optical communication equipment; optical modulation; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; wide band gap semiconductors; GaInNAs; GaInNAs triple quantum well laser; frequency 3 GHz; modulation bandwidth; molecular beam epitaxy; photon lifetime; ridge waveguide laser; wavelength 1310 nm; zero fibre dispersion wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.3657
