Title :
Uncooled 25°-85°C) 10 Gbit/s operation of 1.3 μm-range metamorphic Fabry-Perot laser on GaAs substrate
Author :
Arai, Manabu ; Tadokoro, T. ; Fujisawa, T. ; Kobayashi, Wataru ; Nakashima, Kazuto ; Yuda, M. ; Kondo, Yuta
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi
Abstract :
The first direct modulation of a 1.3 mum-range metamorphic laser diode on a GaAs substrate has been realised. A 200 mum-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85degC, respectively. This laser also achieved 10 Gbit/s direct modulation up to 85degC.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical modulation; quantum well lasers; GaAs; InGaAs-GaAs; QW active layer; bit rate 10 Gbit/s; current 11.4 mA; current 5.2 mA; direct modulation; size 200 mum; temperature 25 C to 85 C; uncooled metamorphic Fabry-Perot laser diode; wavelength 1.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.0263
