Title :
On-wafer noise-parameter measurements at W-band
Author :
Vähä-Heikkilä, Tauno ; Lahdes, Manu ; Kantanen, Mikko ; Tuovinen, Jussi
Author_Institution :
Millimeter Wave Lab. of Finland-Millilab, Espoo, Finland
fDate :
6/1/2003 12:00:00 AM
Abstract :
A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.
Keywords :
III-V semiconductors; S-parameters; electric noise measurement; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device measurement; semiconductor device noise; 79 to 94 GHz; HEMT; InP; InP high electron-mobility transistor; S-parameters; W-band; cold-source method; manual impedance tuner; on-wafer noise-parameter measurements; wideband on-wafer noise-parameter measurement setup; Active noise reduction; Frequency measurement; HEMTs; Impedance; Indium phosphide; MODFETs; Noise measurement; Scattering parameters; Tuners; Wideband;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2003.812554
