DocumentCode
1211241
Title
A new full-wave hybrid differential-integral approach for the investigation of multilayer structures including nonuniformly doped diffusions
Author
Wane, Sidina ; Bajon, Damienne ; Baudrand, Henri ; Gamand, Patrice
Author_Institution
Ecole Nat. Superieure de l´´Electronique, Toulouse, France
Volume
53
Issue
1
fYear
2005
Firstpage
200
Lastpage
214
Abstract
A novel hybrid differential-integral approach, based on the transverse wave formulation (TWF) is presented for full-wave investigation of multilayer structures including inhomogeneous layer stacks with arbitrary doping profiles. In combining both the benefits of spatial and spectral resolutions, the TWF offers a natural framework for the implementation of multiresolution and multiscale approaches from physical considerations. The possibility of separating the transverse TE and TM components of the TWF solution is discussed. Original isolation structures based on the oxide deep-trenches technique are proposed and demonstrate significant isolation capability in the context of RF integrated-circuit applications.
Keywords
BiCMOS integrated circuits; doping profiles; integrated circuit modelling; integro-differential equations; isolation technology; multilayers; radiofrequency integrated circuits; RF integrated circuit; arbitrary doping profiles; deep-trenches technique; full wave hybrid differential-integral approach; inhomogeneous layer; isolation structures; multilayer structure; nonuniformly doped diffusion; spatial resolution; spectral resolution; transverse TE components; transverse TM components; transverse wave formulation; Coupling circuits; Dielectric substrates; Doping profiles; Integral equations; Noise reduction; Nonhomogeneous media; Radio frequency; Radiofrequency integrated circuits; Semiconductor device noise; Spatial resolution;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2004.839905
Filename
1381690
Link To Document