Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz

Author

Six, Gonzague ; Prigent, Gaëtan ; Rius, Eric ; Dambrine, Gilles ; Happy, Henri

Author_Institution

Inst. d´´Electronique de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq, France

Volume

53

Issue

1

fYear

2005

Firstpage

301

Lastpage

305

Abstract

This paper presents the results of the fabrication and characterization up to 220 GHz, of thin-film microstrip (TFMS) transmission-line structures. The transmission lines are fabricated on a low-resistivity silicon substrate (ρ=10 Ω · cm). TFMS lines with a thick dielectric layer (20 μm of benzocyclobutene is used here) present losses of 0.3 dB/mm at 94 GHz and 0.6 dB/mm at 220 GHz. Thus, using this technology, it will be possible to develop monolithic microwave integrated circuits on a silicon substrate.

Keywords

MMIC; dielectric thin films; integrated circuit interconnections; microstrip lines; 10 ohmcm; 20 micron; 220 GHz; 94 GHz; Si; dielectric layer; low resistivity silicon substrate; monolithic microwave integrated circuits; thin film microstrip transmission line structures; transmission line fabrication; Dielectric losses; Dielectric substrates; Dielectric thin films; Fabrication; Integrated circuit technology; Microstrip; Microwave integrated circuits; Microwave technology; Silicon; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.839915

Filename

1381701