• DocumentCode
    1211546
  • Title

    Authors\´ reply [to Comments on "Microwave noise modeling for InP-InGaAs HBTs"]

  • Author

    Jianjun Gao ; Xiuping Li ; Hong Wang ; Boeck, Georg

  • Author_Institution
    Inst. of High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany
  • Volume
    53
  • Issue
    1
  • fYear
    2005
  • Firstpage
    417
  • Abstract
    For original article by J. Gao, X. Li, H. Wang, and G. Boeck see ibid., vol.52, no.4, p.1624-72, April 2004. For comments by L. Escotte and J. Graffeuil see ibid., vol.53, no.1, p.415-16, January 2005.
  • Keywords
    III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor device noise; HBT; InP-InGaAs; microwave noise modelling; small-signal equivalent circuit; Bipolar transistors; Degradation; Electron devices; Heterojunctions; Measurement errors; Microwave devices; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2004.839959
  • Filename
    1381722
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1211546