A Nodal Model Dedicated to Self-Heating and Thermal Coupling Simulations

Author

Beckrich-Ros, Héléne ; Ortolland, Sylvie ; Pache, Denis ; Céli, Didier ; Gloria, Daniel ; Zimmer, Thomas

Author_Institution

STMicroelectronics, Crolles

Volume

21

Issue

2

fYear

2008

fDate

5/1/2008 12:00:00 AM

Firstpage

132

Lastpage

139

Abstract

Both reduction in device sizes and enhanced increase in current densities lead to concern about the impact of the self-heating effect on device electrical characteristics. Moreover, in power transistors applications, devices are connected in parallel, so thermal interaction between devices also has to be considered. In this paper, a nodal model is proposed in order to take into account temperature variation due to self-heating and thermal coupling. This model associated with the HICUM Level 2 version 2.21 compact model is validated thanks to measurements made on specific test structures.

Keywords

SPICE; heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; HICUM Level 2 version 2.21 compact model; RF power transistor modeling; SPICE model; current densities; device electrical characteristics; device size reduction; nodal model; power bipolar transistors; power transistors applications; self-heating effect; temperature variations; thermal coupling effects; thermal coupling simulations; thermal interactions; Bipolar transistors; Coupling circuits; Current measurement; Electric breakdown; Electric variables; Heterojunction bipolar transistors; Microwave devices; Power transistors; Temperature; Thermal resistance; Heterojunction bipolar transistors (HBTs); nodal model; power bipolar transistors; self-heating; thermal coupling;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2008.2000272

Filename

4512054