Title :
Lasing characteristics under high temperature operation of 1.55 μm strained InGaAsP/InGaAlAs MQW laser with InAlAs electron stopper layer
Author :
Murai, H. ; Matsui, Y. ; Ogawa, Y. ; Kunii, T.
Author_Institution :
Semicond. Technol. Lab., OKI Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
11/23/1995 12:00:00 AM
Abstract :
The authors have developed a 1.55 μm strained InGaAsP/InGaAlAs MQW laser with an InAlAs electron stopper layer. The device showed low threshold current and high maximum temperature. Superior lasing characteristics have been demonstrated through comparison with conventional strained MQW lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; 1.55 micron; InAlAs; InAlAs electron stopper layer; InGaAsP-InGaAlAs; high temperature operation; strained InGaAsP/InGaAlAs MQW laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951458
