Title :
Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology
Author :
Al-Attar, Talal ; Lee, Thomas H.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-μm standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dBm at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.
Keywords :
CMOS integrated circuits; IMPATT diodes; MMIC; impedance matching; millimetre wave diodes; transmitters; 0.18 micron; 76 GHz; 77 GHz; CMOS technology; IMPATT diodes; automotive system; communication system; complementary metal oxide semiconductor technology; electromagnetic field solver Sonnet; impact avalanche transit time; impedance matching; microstrip patch antenna; monolithic integrated millimeter wave transmitter; CMOS technology; Diodes; Electromagnetic fields; Impedance matching; Microstrip antennas; Millimeter wave communication; Millimeter wave technology; Patch antennas; Transmitters; Tuning; Complementary metal–oxide–semiconductor technology (CMOS); Sonnet; impact avalanche transit time (IMPATT) diode; microstrip patch antenna; stub; vector network analyzer (VNA);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.858379
