Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology

Author

Al-Attar, Talal ; Lee, Thomas H.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

53

Issue

11

fYear

2005

Firstpage

3557

Lastpage

3561

Abstract

This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-μm standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dBm at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.

Keywords

CMOS integrated circuits; IMPATT diodes; MMIC; impedance matching; millimetre wave diodes; transmitters; 0.18 micron; 76 GHz; 77 GHz; CMOS technology; IMPATT diodes; automotive system; communication system; complementary metal oxide semiconductor technology; electromagnetic field solver Sonnet; impact avalanche transit time; impedance matching; microstrip patch antenna; monolithic integrated millimeter wave transmitter; CMOS technology; Diodes; Electromagnetic fields; Impedance matching; Microstrip antennas; Millimeter wave communication; Millimeter wave technology; Patch antennas; Transmitters; Tuning; Complementary metal–oxide–semiconductor technology (CMOS); Sonnet; impact avalanche transit time (IMPATT) diode; microstrip patch antenna; stub; vector network analyzer (VNA);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.858379

Filename

1528808