Broad-band power amplifier with a novel tunable output matching network

Author

Zhang, Haitao ; Gao, Huai ; Li, Guann-Pyng

Author_Institution

Integrated Nanosystems Res. Facility, Univ. of California, Irvine, CA, USA

Volume

53

Issue

11

fYear

2005

Firstpage

3606

Lastpage

3614

Abstract

A multiband power amplifier module (PAM) comprised of an InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) broad-band power amplifier (PA) and a tunable multiband output matching circuit is proposed and demonstrated. The three-stage MMIC broad-band PA is realized by using the novel HBT structure and layout, applying broad-band and compensating matching technique in matching network design, adopting power gain predistortion at the first stage, and optimizing the distribution of power gain among stages. The output matching circuit is implemented with parallel inductance-capacitance (LC) tank circuits using p-i-n diodes to control the inductor value. This multiband PAM offers advantages of tunable frequency band, low insertion loss, small size, and high linearity. The multiband PAM biased at 3.5 V demonstrates 27-dB power gain, 30-dBm output power, and higher than 40% power-added efficiency at frequencies covering dual bands from 0.85 to 0.95 GHz and from 1.71 to 1.95 GHz.

Keywords

MMIC power amplifiers; bipolar MMIC; circuit tuning; heterojunction bipolar transistors; p-i-n diodes; wideband amplifiers; 0.85 to 0.95 GHz; 1.71 to 1.95 GHz; 27 dB; 3.5 V; HBT; InGaP-GaAs; MMIC; PAM; broad band power amplifier; heterojunction bipolar transistor; matching circuit; matching network design; monolithic microwave integrated circuit; p-i-n diodes; parallel inductance-capacitance tank circuits; power amplifier module; power gain; Bipolar integrated circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; MMICs; Microwave amplifiers; Microwave integrated circuits; Power amplifiers; Tunable circuits and devices; Heterojunction bipolar transistors (HBTs); monolithic microwave integrated circuit (MMIC) power amplifiers (PAs); power bipolar transistor amplifiers; reconfigurable architectures; semiconductor diode switches; tunable circuits and devices;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.858374

Filename

1528814