A 1.8-V 6/9-GHz reconfigurable dual-band quadrature LC VCO in SiGe BiCMOS technology

Author

Shin, Hyunchol ; Xu, Zhiwei ; Chang, M. Frank

Author_Institution

High Speed Electron. Lab., Univ. of California, Los Angeles, CA, USA

Volume

38

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

1028

Lastpage

1032

Abstract

This paper presents a dual-band voltage-controlled oscillator (VCO) that can be reconfigured between 6- and 9-GHz frequency bands. It comprises a 6-GHz LC-tuned VCO, two 1/2 dividers, two mixers, and two 3-GHz notch filters. The 9-GHz output is generated based on the analog frequency multiplication method by mixing the 6-GHz VCO output with its divide-by-two signal. The VCO, implemented in a 0.18-μm SiGe BiCMOS technology, achieves a fast reconfiguration time of 3.6 ns. The measured VCO phase noises are -106 and -104 dBc/Hz at 1-MHz offset for 6- and 9-GHz modes, respectively, while draining 10.8 mA from a 1.8-V supply.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; integrated circuit noise; phase noise; semiconductor materials; voltage-controlled oscillators; 0.18 micron; 1.8 V; 10.8 mA; 3.6 ns; 6 GHz; 9 GHz; BiCMOS; SiGe; analog frequency multiplication method; divide-by-two signal; notch filters; phase noises; reconfigurable dual-band quadrature LC VCO; reconfiguration time; BiCMOS integrated circuits; Dual band; Filters; Frequency conversion; Germanium silicon alloys; Noise measurement; Phase measurement; Signal generators; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.811970

Filename

1202005