DocumentCode
1211993
Title
Analysis of on-chip spiral inductors using the distributed capacitance model
Author
Wu, Chia-Hsin ; Tang, Chih-Chun ; Liu, Shen-Iuan
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
38
Issue
6
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
1040
Lastpage
1044
Abstract
In this paper, a distributed capacitance model (DCM) for monolithic spiral inductors is developed to predict the equivalent coupling capacitances Cp between the two terminals and the equivalent capacitance between the metal track and the substrate Csub. Therefore, the characteristics of inductors such as the S parameter, the quality factor Q, and the self-resonant frequency fSR can be predicted by its series inductance, equivalent capacitances, and series resistance. A large number of inductors have been implemented in 0.25- and 0.35-μm CMOS processes to demonstrate the prediction accuracy. For planar and multilayer inductors, DCM can provide a quick and accurate assessment to the design of monolithic spiral inductors.
Keywords
CMOS integrated circuits; Q-factor; S-parameters; capacitance; inductors; radiofrequency integrated circuits; 0.25 micron; 0.35 micron; CMOS processes; DCM; S parameter; distributed capacitance model; equivalent coupling capacitances; metal track; on-chip spiral inductors; prediction accuracy; quality factor; self-resonant frequency; series inductance; series resistance; CMOS process; Capacitance; Frequency; Inductance; Inductors; Predictive models; Q factor; Scattering parameters; Spirals; Strontium;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2003.811965
Filename
1202007
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