• DocumentCode
    1211993
  • Title

    Analysis of on-chip spiral inductors using the distributed capacitance model

  • Author

    Wu, Chia-Hsin ; Tang, Chih-Chun ; Liu, Shen-Iuan

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    38
  • Issue
    6
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    1040
  • Lastpage
    1044
  • Abstract
    In this paper, a distributed capacitance model (DCM) for monolithic spiral inductors is developed to predict the equivalent coupling capacitances Cp between the two terminals and the equivalent capacitance between the metal track and the substrate Csub. Therefore, the characteristics of inductors such as the S parameter, the quality factor Q, and the self-resonant frequency fSR can be predicted by its series inductance, equivalent capacitances, and series resistance. A large number of inductors have been implemented in 0.25- and 0.35-μm CMOS processes to demonstrate the prediction accuracy. For planar and multilayer inductors, DCM can provide a quick and accurate assessment to the design of monolithic spiral inductors.
  • Keywords
    CMOS integrated circuits; Q-factor; S-parameters; capacitance; inductors; radiofrequency integrated circuits; 0.25 micron; 0.35 micron; CMOS processes; DCM; S parameter; distributed capacitance model; equivalent coupling capacitances; metal track; on-chip spiral inductors; prediction accuracy; quality factor; self-resonant frequency; series inductance; series resistance; CMOS process; Capacitance; Frequency; Inductance; Inductors; Predictive models; Q factor; Scattering parameters; Spirals; Strontium;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2003.811965
  • Filename
    1202007