DocumentCode :
1211993
Title :
Analysis of on-chip spiral inductors using the distributed capacitance model
Author :
Wu, Chia-Hsin ; Tang, Chih-Chun ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
38
Issue :
6
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
1040
Lastpage :
1044
Abstract :
In this paper, a distributed capacitance model (DCM) for monolithic spiral inductors is developed to predict the equivalent coupling capacitances Cp between the two terminals and the equivalent capacitance between the metal track and the substrate Csub. Therefore, the characteristics of inductors such as the S parameter, the quality factor Q, and the self-resonant frequency fSR can be predicted by its series inductance, equivalent capacitances, and series resistance. A large number of inductors have been implemented in 0.25- and 0.35-μm CMOS processes to demonstrate the prediction accuracy. For planar and multilayer inductors, DCM can provide a quick and accurate assessment to the design of monolithic spiral inductors.
Keywords :
CMOS integrated circuits; Q-factor; S-parameters; capacitance; inductors; radiofrequency integrated circuits; 0.25 micron; 0.35 micron; CMOS processes; DCM; S parameter; distributed capacitance model; equivalent coupling capacitances; metal track; on-chip spiral inductors; prediction accuracy; quality factor; self-resonant frequency; series inductance; series resistance; CMOS process; Capacitance; Frequency; Inductance; Inductors; Predictive models; Q factor; Scattering parameters; Spirals; Strontium;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2003.811965
Filename :
1202007
Link To Document :
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