• DocumentCode
    1212105
  • Title

    Two-dimensional analysis of GTO switching under the influence of external circuit

  • Author

    Turowski, M. ; Napieralski, A.

  • Author_Institution
    Inst. of Electron., Tech. Univ. Lodz, Poland
  • Volume
    141
  • Issue
    6
  • fYear
    1994
  • fDate
    12/1/1994 12:00:00 AM
  • Firstpage
    483
  • Lastpage
    488
  • Abstract
    The authors discuss the influence of an external circuit on the internal behaviour of GTO structure and on waveforms in the circuit. Two-dimensional simulations have been performed with realistic RLC loading; the obtained waveforms have been successfully compared with experimental measurements. Computed results show that the peak of power density (i.e., a possible hot spot) remains located in the same place inside the structure throughout the whole turn-off process. The most dangerous voltage and power spikes are caused mainly by parasitic inductances in the external circuit. These results show the importance of GTO structure design as a function of external load conditions and the possibility of hot spots occurring under the cathode contact. The presented numerical results were obtained with a 2D device simulation program, PASS, running on a personal computer
  • Keywords
    digital simulation; load (electric); power semiconductor switches; switching; thyristors; 2D device simulation program; GTO switching; PASS; RLC loading; cathode contact; circuit waveforms; external circuit influence; external load conditions; hot spots; parasitic inductances; power density peaks; power spikes; turnoff process; two-dimensional analysis;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:19941393
  • Filename
    338862