Analytical extraction method for submicron MOS transistor model parameters in the linear region

Author

Karlsson, P R ; Jeppson, K.O.

Author_Institution

Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

141

Issue

6

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

457

Lastpage

461

Abstract

A novel four-point technique for direct extraction of model parameters of submicron transistors in the linear region is presented. Detailed analytical expressions are given for the extraction procedure. Theoretical sensitivity analysis shows that the influence of measurement noise can be reduced by proper choice of the applied voltages for which the data points are measured. As an example, a sensitivity of only 2% in the threshold voltage was obtained for 1% noise in the four data points. Experiments show that the extracted parameter values are constant within large intervals of applied voltages. Finally, as a generalisation of the direct extraction method, a least-square fitting technique is suggested which offers the user full freedom concerning the number of data points to be used

Keywords

MOSFET; characteristics measurement; least squares approximations; semiconductor device models; sensitivity analysis; analytical extraction method; data point selection; drain current characteristics; four-point technique; least-square fitting technique; linear region; measurement noise; mobility reduction factor; sensitivity analysis; submicron MOS transistor model parameters; threshold voltage;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19941457

Filename

338866