Computer-aided design of an RF MOSFET power amplifier

Author

Hoile, G.A. ; Reader, H.C.

Author_Institution

Dept. of Electron. Eng., Natal Univ., Durban, South Africa

Volume

141

Issue

6

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

433

Lastpage

438

Abstract

An RF MOSFET power amplifier is designed using linear and nonlinear analysis programs. It includes nonlinear optimisation within a harmonic-balance program. The amplifier has a nominal output of 15 W over the frequency band 118-175 MHz, using a single MOSFET with LC matching elements. The design procedure is described in detail, including the choice of matching networks and stabilising elements as well as the nonlinear optimisation. A nonlinear equivalent-circuit model is used for the RF power MOSFET, while passive-component models take into account the major parasitic effects. The amplifier is constructed directly from the computer-aided design and evaluated. This computer-aided-design approach takes the initial design to a level where only minimal empirical adjustments may be required. A modified procedure is proposed which reduces modelling errors in a final computer-aided design

Keywords

MOSFET circuits; VHF amplifiers; circuit CAD; circuit optimisation; equivalent circuits; impedance matching; nonlinear network synthesis; power amplifiers; 118 to 175 MHz; 15 W; LC matching elements; RF MOSFET power amplifier; computer-aided design; gradient optimisation routine; harmonic-balance program; linear analysis program; matching networks; modelling errors; nonlinear analysis program; nonlinear equivalent-circuit model; nonlinear optimisation; parasitic effects; passive-component models; stabilising elements;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19941397

Filename

338870