Title :
Spatial power combining oscillators based on an extended resonance technique
Author :
Mortazawi, Amir ; de Leach, B.C.
Author_Institution :
Dept. of Electr. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fDate :
12/1/1994 12:00:00 AM
Abstract :
Several spatial power combining oscillators employing an extended resonance technique have been designed and fabricated for the first time on single layer microstrip structures. Power combining efficiency, circuit tolerance to individual device variations and the effect of device failures on circuit performance were studied. Results obtained indicate exceptional circuit tolerance to individual device parameter variations as well as to device failures. The combiners described herein were designed and operated at 8 GHz with effective radiated powers of 0.22 W, 0.64 W and 4.3 W for a two, four and a nine device combiner, respectively
Keywords :
MESFET circuits; circuit resonance; equivalent circuits; microstrip circuits; microwave integrated circuits; microwave oscillators; nonlinear network analysis; power combiners; 0.22 to 4.3 W; 8 GHz; Duroid substrates; MIC; SHF; circuit performance; combining efficiency; device failures; device parameter variations tolerance; extended resonance technique; single layer microstrip structures; spatial power combining oscillators; Circuits; Fabry-Perot; Frequency synchronization; Injection-locked oscillators; MESFETs; Microstrip; Microwave devices; Microwave theory and techniques; Phased arrays; Resonance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
