Title :
Low-loss straight and curved ridge waveguides in LPE-grown GaInAsP
Author :
van Brug, H. ; Groen, F.H. ; Oei, Y.S. ; Pedersen, J.W. ; Doeksen, D.K. ; van der Tol, J.J.G.M.
Author_Institution :
Dept. of Appl. Phys. & Electr. Eng., Delft Univ. of Technol., Netherlands
Abstract :
Loss measurements on ridge waveguides in LPE-grown GaInAsP at a wavelength of 1.3 mu m are presented. An attenuation of 4.5 dB/cm has been obtained for straight waveguides, and for curved waveguides an excess loss at low as 0.7 dB was found for a 20.8 degrees S-bend with a radius of 300 mu m ( approximately=1.5 dB/90 degrees ).
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical losses; optical waveguides; 0.7 dB; 1.3 micron; GaInAsP; LPE growth; S-bend; attenuation; bending losses; curved waveguides; excess loss; ridge waveguides; straight waveguides; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890889
