Title :
Monolithically integrated optical displacement sensor in GaAs/AlGaAs
Author :
Hofstetter, D. ; Zappe, H.P. ; Dändliker, R.
Author_Institution :
Paul Scherrer Inst., Villigen, Switzerland
fDate :
11/23/1995 12:00:00 AM
Abstract :
A monolithically integrated displacement sensor has been fabricated in the GaAs/AlGaAs material system. The device is configured as a Michelson interferometer and consists of a DBR laser, a directional coupler, transparent waveguides and a photodetector. Interference fringes could be seen at measurement distance of up to 45 cm, requiring only the alignment of an external GRIN lens for beam collimation
Keywords :
III-V semiconductors; Michelson interferometers; aluminium compounds; displacement measurement; gallium arsenide; integrated optics; optical sensors; 45 cm; DBR laser; GRIN lens; GaAs-AlGaAs; Michelson interferometer; beam collimation; directional coupler; monolithically integrated optical displacement sensor; photodetector; transparent waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951455
