Title :
GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance
Author :
Krishnamurthi, Kathiravan ; Nilsen, Svein M. ; Harrison, Robert G.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fDate :
12/1/1994 12:00:00 AM
Abstract :
Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al0.4Ga0.6As barrier, and using In0.2Ga0.8As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely reactive multiplication, without the output-power saturation both predicted and observed in triplers using leaky-barrier SBVs
Keywords :
III-V semiconductors; Q-factor; frequency multipliers; gallium arsenide; leakage currents; millimetre wave diodes; millimetre wave frequency convertors; varactors; 192 GHz; Al0.4Ga0.6As; Al0.4Ga0.6As barrier; AlAs; EHF; GaAs; In0.2Ga0.8As; In0.2Ga0.8As spacers; MM-wave triplers; capacitance-modulation characteristics; effective barrier height; high Q-factor; millimeter-wave triplers; reactive multiplication; single-barrier varactors; thin AlAs layer; Circuits; Current measurement; Gallium arsenide; Guidelines; Leakage current; Microwave technology; Photonic band gap; Semiconductor materials; Space technology; Varactors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
