Title :
MQW electroabsorption optical modulator for 40 Gbit/s modulation
Author :
Ido, T. ; Tanaka, S. ; Suzuki, M. ; Inoue, H.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
11/23/1995 12:00:00 AM
Abstract :
The authors demonstrate an MQW electroabsorption optical modulator with waveguides for 40 Gbit/s modulation. The fabricated device, which is long (1.5 mm) enough for easy fabrication and packaging, shows a record modulation bandwidth of 50 GHz, low driving voltage of 2.8 V and a low insertion loss of 8 dB
Keywords :
electro-optical modulation; electroabsorption; semiconductor quantum wells; 1.5 mm; 2.8 V; 40 Gbit/s; 50 GHz; 8 dB; MQW electroabsorption optical modulator; driving voltage; fabrication; insertion loss; modulation bandwidth; packaging; waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951407
