• DocumentCode
    1212749
  • Title

    MQW electroabsorption optical modulator for 40 Gbit/s modulation

  • Author

    Ido, T. ; Tanaka, S. ; Suzuki, M. ; Inoue, H.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    31
  • Issue
    24
  • fYear
    1995
  • fDate
    11/23/1995 12:00:00 AM
  • Firstpage
    2124
  • Lastpage
    2125
  • Abstract
    The authors demonstrate an MQW electroabsorption optical modulator with waveguides for 40 Gbit/s modulation. The fabricated device, which is long (1.5 mm) enough for easy fabrication and packaging, shows a record modulation bandwidth of 50 GHz, low driving voltage of 2.8 V and a low insertion loss of 8 dB
  • Keywords
    electro-optical modulation; electroabsorption; semiconductor quantum wells; 1.5 mm; 2.8 V; 40 Gbit/s; 50 GHz; 8 dB; MQW electroabsorption optical modulator; driving voltage; fabrication; insertion loss; modulation bandwidth; packaging; waveguides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951407
  • Filename
    480750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1212749