DocumentCode :
1212841
Title :
Selective epitaxial refill for in-trench device fabrication
Author :
Burghartz, J.N. ; Warnock, J.D. ; Mader, S.R. ; Ginsberg, B.J.
Author_Institution :
IBM Res. Div., Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
25
Issue :
20
fYear :
1989
Firstpage :
1337
Lastpage :
1338
Abstract :
A new technology is presented for in-trench device fabrication using selective epitaxial overgrowth and preferential polishing. The silicon quality is investigated by a comparison of diodes in the centre of the trench, butted to the sides and overlapping the entire trench area. Good results were obtained for centre and butted devices. Ideal characteristics were found also for the overlap diodes, but with lower yield.
Keywords :
integrated circuit technology; semiconductor diodes; semiconductor technology; vapour phase epitaxial growth; Si; butted devices; diodes; in-trench device fabrication; overlap diodes; preferential polishing; selective epitaxial overgrowth; selective epitaxial refill; yield;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890893
Filename :
33980
Link To Document :
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