DocumentCode
1212847
Title
Efficiency of baritt and dovett oscillators
Author
Sitch, J.E. ; Robson, P.N.
Author_Institution
University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK
Volume
1
Issue
1
fYear
1976
fDate
9/1/1976 12:00:00 AM
Firstpage
31
Lastpage
36
Abstract
The large-signal performance of baritt and dovett (double-velocity transit-time) devices is analysed using an analytical model and computer simulations. The predictions agree well with each other and, in the case of baritts, with experimental results. Efficiencies of more than 25% are predicted for some dovett devices.
Keywords
digital simulation; electronics applications of computers; microwave oscillators; negative resistance; semiconductor device models; solid-state microwave devices; transit time devices; BARITT devices; DOVETT devices; analytical model; computer simulations; double velocity transit time; large signal performance; microwave oscillators; negative resistance efficiency;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1976.0005
Filename
4807510
Link To Document