Title :
Rutherford scattering analysis: a tool for semiconductor-device technology
Author_Institution :
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
fDate :
1/1/1977 12:00:00 AM
Abstract :
In the paper we consider how the Rutherford scattering of high-energy (MeV) light ions can be used as a nondestructive technique for studying thin films on semiconductor surfaces. A number of examples are discussed which illustrate the potential and limitations of the technique for studying semiconductordevice structures.
Keywords :
ion mobility; metallisation; passivation; semiconductor technology; semiconductor-metal boundaries; surface structure; Rutherford scattering analysis; nondestructive technique; semiconductor device technology; semiconductor surfaces; thin films;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1977.0001
