Title :
High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors
Author :
Tu, Der-Wei ; Duncan, Scott W. ; Eskandarian, A. ; Golja, Bogdan ; Kane, Brittin C. ; Svensson, Stefan P. ; Weinreb, Sander ; Byer, Norman E.
Author_Institution :
Martin Marietta Labs, Baltimore, MD, USA
fDate :
12/1/1994 12:00:00 AM
Abstract :
Five versions of monolithic W-band 0.1 μm AlGaAs-InGaAs-GaAs pseudomorphic HEMT, four-stage, low noise amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise figure of 3.5 dB with 23.0 dB gain at 92 GHz and a maximum gain of 33.5 dB with a 6.2 dB noise figure at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips feature coplanar waveguide circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads
Keywords :
HEMT integrated circuits; MMIC amplifiers; coplanar waveguides; field effect MIMIC; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 23 to 33.5 dB; 3.5 to 6.2 dB; 92 to 102 GHz; AlGaAs-InGaAs-GaAs; CPW; DC bonding pads; EHF; MIMIC; MM-wave monolithic integrated circuits; W-band; coplanar waveguide circuit elements; four-stage LNA; high electron mobility transistors; low noise amplifiers; low-cost production; millimeter wave ICs; monolithic LNA; pseudomorphic HEMT; single-polarity bias requirement; Bonding; Coplanar waveguides; Gain; Integrated circuit noise; Low-noise amplifiers; MIMICs; Monolithic integrated circuits; Noise figure; PHEMTs; Production;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
