A V-band high-efficiency pseudomorphic HEMT monolithic power amplifier

Author

Sharma, Arvind K. ; Onak, Gerald P. ; Lai, Richard ; Tan, Kin L.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

42

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2603

Lastpage

2609

Abstract

This paper presents a high-power and high-efficiency monolithic power amplifier at V-band utilizing highly reliable and manufacturable 0.15 μm InGaAs-AlGaAs-GaAs pseudomorphic HEMT fabrication technology. The performance of the power amplifier is 13.8 dB small signal gain, 13.9% power-added efficiency, and 26.83 dBm (482 mW) compressed power output at 60 GHz for unpassivated HEMT process. The same circuit with passivated process produced a linear gain of 13.2 dB, 11% power-added efficiency, and compressed output power of 25.68 dBm (370 mW). The producibility of this amplifier has been demonstrated in volume production with several wafer lots resulting in a 20% total yield through RF tests

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; millimetre wave amplifiers; power amplifiers; power integrated circuits; 0.15 micron; 11 percent; 13.2 dB; 13.8 dB; 13.9 percent; 370 mW; 482 mW; 60 GHz; EHF; HEMT fabrication technology; HEMT monolithic power amplifier; InGaAs-AlGaAs-GaAs; MIMIC; MM-wave IC; V-band; high-efficiency operation; passivated process; pseudomorphic HEMT; volume production; Circuits; Fabrication; HEMTs; High power amplifiers; PHEMTs; Performance gain; Power amplifiers; Power generation; Pulp manufacturing; Signal processing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.339803

Filename

339803