High-efficiency low adjacent channel leakage GaAs power MMIC for 1.9 GHz digital cordless phones

Author

Yokoyama, Takahiro ; Kunihisa, Takto ; Fujimoto, Hiromasa ; Takehara, Hiroyasu ; Ishida, Kaoru ; Ikeda, Hikaru ; Ishikawa, Osamu

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

42

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2623

Lastpage

2628

Abstract

We report on the fabrication of highly efficient GaAs MESFET´s, the design for low distortion, and the performance of this MMIC. Two power MESFET´s and input, interstage, and output matching circuits were integrated in a very small chip size of 1.0 mm×1.5 mm. This MMIC achieved an output power of 22 dBm at 1.9 GHz with high power added efficiency of 49.5% and low adjacent channel leakage power of -56 dBc under the low operating voltage of 3.0 V. This result represents one of the highest efficiencies that have been reported. This MMIC has a promising future for 1.9 GHz digital cordless phone applications

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; cordless telephone systems; field effect MMIC; gallium arsenide; impedance matching; leakage currents; power integrated circuits; telephony; 1.9 GHz; 3 V; 40.5 percent; GaAs; GaAs MESFET fabrication; GaAs power MMIC; I/O power performance; digital cordless phones; high-efficiency; input matching circuits; interstage matching circuits; low adjacent channel leakage; low distortion; low operating voltage; output matching circuits; output power; power MESFET; power added efficiency; Batteries; FETs; Fabrication; Gallium arsenide; Knee; Low voltage; MESFET integrated circuits; MMICs; Nonlinear distortion; Telephone sets;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.339806

Filename

339806