Title :
Determination of excess carrier lifetime of p-i-n diodes from the r.f. resistance at microwave frequencies
Author :
Bhat, K.N. ; Borrego, J.M.
Author_Institution :
Rensselaer Polytechnic Institute, ESE Department, Troy, USA
fDate :
4/1/1977 12:00:00 AM
Abstract :
A steady-state method for determining the excess carrier lifetime using p-i-n diodes is presented. The carrier lifetime is obtained from the r.f. resistance of a forward-biased p-i-n diode measured at microwave frequencies. The carrier lifetime obtained with this method in diffused silicon p-i-n doides is compared with the carrier lifetime obtained from other usual methods of measurement.
Keywords :
carrier lifetime; semiconductor diodes; solid-state microwave devices; RF resistance; excess carrier lifetime; microwave frequencies; p-i-n diodes; steady state method;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1977.0007
